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FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench(R) MOSFET
February 2005
FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench(R) MOSFET
Features
3.2 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V RDS(ON) = 130 m @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) FLMP SC75 package: Enhanced thermal performance in industry-standard package size
Applications
Battery management
General Description
This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
S2 S1 G1
5 4
Bottom Drain Contact
3 2 1
Bottom Drain Contact
S1
S2
G2
6
Absolute Maximum Ratings TA = 25C unless otherwise noted
Symbol
VDSS VGSS ID PD TJ, TSTG RJA RJC Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for single Operation (Note 1a) (Note 1a)
Parameter
Ratings
20 12 3.2 12 1.5 -55 to +150
Units
V V A
W C C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Case 80 5
Packge Marking and Ordering Information
Device Marking
.F
Device
FDJ1028N
Reel Size
7"
Tape width
8mm
Quantity
3000 units
(c)2005 Fairchild Semiconductor Corporation
1
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FDJ1028N Rev. B2 (W)
FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench(R) MOSFET
Electrical Characteristics TA = 25C unless otherwise noted
Symbol
Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 3.2 A VGS = 2.5 V, ID = 2.7 A VGS = 4.5 V, ID = 3.2A, TJ = 125C VDS = 5 V, ID = 3.2 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz 0.6 1.0 -3 70 100 83 7.5 90 130 132 20 13 1 100 1.5 V mV/C A nA
Parameter
Test Conditions
Min
Typ
Max
Units
On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance V mV/C m
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
Notes:
S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 200 50 30 10 pF pF pF 14 16 20 4 3 ns ns ns ns nC nC nC
Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10 V, ID = 3.2 A, VGS = 4.5 V 7 8 11 2 2 0.4 1.0
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.25 A (Note 2) IF = 3.2 A, diF/dt = 100 A/s 0.8 11 2.5 1.25 1.2 A V nS nC
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 80C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140C/W when mounted on a minimum pad of 2 oz copper (Single Operation).
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
2 FDJ1028N Rev. B2 (W)
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FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench(R) MOSFET
Typical Characteristics
12
2.2
VGS = 4.5V
10
ID, DRAIN CURRENT (A)
3.5V
R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
2
VGS = 2.5V
1.8 1.6 1.4 1.2 1 0.8
8
2.5V
6 4
3.0V 3.5V 4.0V 4.5V
2.0V
2 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.28
1.6
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON) , ON-RESISTANCE (OHM)
I D = 3.2A VGS = 4.5V 1.4
ID = 1.6A
0.24
0.2
1.2
0.16
1
TA = 125C
0.12
0.8
0.08
TA = 25C
0.6 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
0.04 1 2 3 4 5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
TA = -55C
ID , DRAIN CURRENT (A)
25C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
8
VGS = 0V 1 TA = 125C 0.1 25C 0.01 -55C 0.001
125C
6
4
2
0 1 1.5 2 2.5 3 3.5
VGS , GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
3 FDJ1028N Rev. B2 (W)
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FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench(R) MOSFET
Typical Characteristics
10
V GS, GATE-SOURCE VOLTAGE (V)
300
ID = 3.2A VDS = 5V 10V
CAPACITANCE (pF)
f = 1MHz VGS = 0 V C ISS
8 15V 6
250 200 150 100 C OSS 50 C RSS 0
4
2
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Q g, GATE CHARGE (nC)
0
5
10
15
20
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
10
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT 1ms 10ms
100s
8
SINGLE PULSE RJA = 140C/W TA = 25C
6
1
1s DC
100ms
10s
4
0.1
VGS = 4.5V SINGLE PULSE RJA = 140C/W TA = 25C
2
0.01 0.1 1 10 100
0 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
D = 0.5
RJA(t) = r(t) * R JA R JA = 140 C/W
0.2
P(pk) 0.1
0.1
t1
0.05 0.02 0.01 SINGLE PULSE
t2 T J - T A = P * R JA(t) Duty Cycle, D = t 1 /t 2
0.01 0.0001 0.001 0.01 0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
4 FDJ1028N Rev. B2 (W)
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FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
DRAIN
1
PKG C L
3
(0.24) (0.18) 0.30 MIN DRAIN 1 TERMINAL (0.73) (0.50) 0.84 0.20 PKG C L 0.60 DRAIN 2
1 6
PKG C L
4
0.30 0.20 PKG C L (0.46)
6 4
2.35 MIN 1.35
DRAIN 1
0.50 MIN
3
Bottom View
1.70 1.50 PKG C L
6 4
0.50 A 1.00 B
DRAIN 2 TERMINAL
Recommended Landing Pattern
PKG C L
1.75 1.55
1
3
(0.20) 0.50 1.00
0.275 0.125 0.075 M A B
Top View
PKG C L 0.80 0.65 SEATING PLANE PKG C L 0.225 0.075
1.075 0.925 2.15 1.85
5 FDJ1028N Rev. B2 (W)
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FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench(R) MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15
6 FDJ1028N Rev. B2 (W)
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